6G on the horizon: semiconductors gain power thanks to "latch effect" in GaN
An international team of engineers and scientists has achieved a breakthrough in the development of gallium nitride (GaN)-based semiconductors, which is critically important for the advancement of 6G. The transition to 6G necessitates significantly higher data transfer rates for technologies such as autonomous transportation and virtual reality.
The researchers have presented a novel architecture for radio frequency amplifiers based on GaN. A key discovery was the "latch effect" – a previously unknown physical phenomenon ensuring stable current control at high frequencies. The team tested superlattice channel field-effect transistors (SLCFETs) utilizing thousands of nanoribs to direct current flow. These components demonstrated record-breaking performance in the W-band (75–110 GHz), intended for 6G networks.
As Professor Martin Kuball from the University of Bristol noted, this new physical phenomenon has paved the way for stable and high-frequency operation of devices.
The researchers not only localized the origin point of the latch effect but also confirmed its stability through long-term testing, revealing no signs of degradation. Stability is further ensured by a thin dielectric coating around each nanorib.
This breakthrough opens the path to the creation of energy-efficient, multifunctional chips of a new generation – the foundation for future computing, quantum systems, and 6G networks.
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